?2004 osaoptolightgmbh?tel.+49(0)3065762683? fax+49(0)3065762681?contact@osaopto.com red item no.: 193150 1. thisspecificationappliestogaalas/gaalasle dchips 2. structure 2.1 mesastructure 2.2 electrodes pside(anode) aualloy nside(cathode) aualloyoral 3. outlines(dimensionsinmicrons) wirebondcontactscanalsobesquare 4. electricalandopticalcharacteristics(t=25c) parameter symbol conditions min typ max unit forwardvoltage v f i f =20ma 1,85 2,30 v reversecurrent i r v r =5v 10 m a luminousintensity* i v i f =20ma 26,0 mcd peakwavelength l p i f =20ma 650 nm *onrequest,waferswillbedeliveredaccordingt oluminousintensityclasses brightnessmeasurementatosaongoldplate 5. packing diceonadhesivefilmwith1)wirebondsideonto p 2)backcontactontop 6. labeling type lotno. i v typ quantity min max nelectrode 180 pelectrode 260 260 120
|
